Growth of crystalline silicon by a seed layer approach using plasma enhanced chemical vapor deposition

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作者：
Khelil, M. [1 ]
Kraiem, S. [1 ]
Khirouni, K. [1 ]
Alaya, S. [1 ]
机构：
[1] Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée a l'Environnement, Faculté des Sciences de Gabès, cité Erriadh, Université de Gabès, Gabès,6079, Tunisia
来源：
Physica B: Condensed Matter | 2021年 / 609卷
关键词：
Plasma enhanced chemical vapor deposition;
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