A generic volatile memristor model

A novel class of memristive devices that are volatile has recently emerged. These volatile memristors have proved advantageous in numerous applications, such as their use as selector devices for memristive crossbar arrays, circuit elements for spiking neurons and short-term synapses. Compact models that accurately describe their characteristics are necessary to reap the benefits of these devices. This paper proposes a generic compact volatile memristor model with parameters that can be adapted to various volatile memristive devices. These parameters can easily be used to tune the I-V characteristics as well as the temporal characteristics in terms of the delay and relaxation times. This work introduces two variants of the model, one for voltage-controlled devices and the other for current-controlled devices. The voltage-controlled variant of the model was fitted to an Ag-based filamentary volatile memristor, while the current-controlled variant was fitted to a Mott memristor. An extensive comparison of the fitted models to the experimental data has been provided. It has been shown that the proposed model can accurately describe the quasi-static I-V characteristics and temporal characteristics of both devices under various conditions.