High-precision laser confocal measurement of semiconductor wafer thickness

被引:0
|
作者
Li Z. [1 ]
Liu Z. [1 ]
Wang Y. [1 ]
Qiu L. [1 ]
Yang S. [1 ]
机构
[1] MIIT Key Laboratory of Complex-Field Intelligent Exploration, Beijing Institute of Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing
来源
Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2024年 / 32卷 / 07期
关键词
high precision; laser confocal; nondestructive measurement; semiconductor wafer; thickness measurement;
D O I
10.37188/OPE.20243207.0956
中图分类号
学科分类号
摘要
Addressing the need for precise non-contact measurement of semiconductor wafer thickness, this study introduces a method based on laser confocal technology that ensures remarkable accuracy. It utilizes a voice coil nanodisplacement platform for high-resolution actuation of a laser confocal optical probe, enabling precise axial scanning. This method relies on identifying the peak points on the confocal laser′s axial response curve, which are indicative of the objective lens′s focal point, to accurately align and position the wafer′s upper and lower surfaces. By accurately calculating the physical coordinates of each sampling point on the wafer surface through ray tracing algorithms, this technique achieves high-precision non-contact measurement of wafer thickness. A specialized laser confocal sensor for semiconductor wafer thickness measurement was developed, showcasing an axial resolution of under 5 nm, an axial scanning range of up to 5.7 mm, and repeatability in thickness measurement of under 100 nm across six wafer types. The process takes less than 400 ms for a single wafer. This research successfully applies confocal focusing technology to semiconductor measurement, offering a novel solution for high-precision, non-destructive, online wafer thickness measurement. © 2024 Chinese Academy of Sciences. All rights reserved.
引用
收藏
页码:956 / 965
页数:9
相关论文
共 13 条
  • [1] YAN X Y, CHENG J, BIAN D, Et al., Surface profile measurement of doped silicon using near-infrared low-coherence light [J], Applied Optics, 58, 27, pp. 7436-7442, (2019)
  • [2] PARK Y S, JONGHAN, A novel method for simultaneous measurement of thickness, refractive index, bow, and warp of a large silicon wafer using a spectral-domain interferometer, Metrologia:International Journal of Scientific Metrology, 57, 6, (2020)
  • [3] KIM Y, SUGITA N, MITSUISHI M., Measurement of surface profile and thickness of multilayer wafer using wavelength-tuning fringe analysis[J], Precision Engineering, 52, pp. 130-137, (2018)
  • [4] ZENG Y H, FU Y X, TANG D M, Et al., Standard measuring device for thickness of silicon wafer based on laser compensation system[C], 2017 4th International Conference on Systems and Informatics (ICSAI), (2018)
  • [5] AKIKO H, YOUICHI B, JAESEOK B, Et al., Precise measurement of the thickness of silicon wafers by double-sided interferometer and bilateral comparison, Metrologia, 58, 5, (2021)
  • [6] ZHANG ZH R, HONG H Y, ZHANG X H., High-precision 3D inspection of circuit board micro components based on spectral confocal sensor, Computer & Digital Engineering, 50, 9, pp. 2102-2108, (2022)
  • [7] PHOULADY A, MAY N, CHOI H, Et al., A novel material detection method using femtosecond laser, confocal imaging and image processing enabling endpointing in fast inspection of microelectronics, Microelectronics Reliability, 126, (2021)
  • [8] CASTILLO-BADILLO J A, CABRERA-WROOMAN A, GARCIA-SAINZ J A., Visualizing G protein-coupled receptors in action through confocal microscopy techniques, Arch Med Res, 45, 4, pp. 283-293, (2014)
  • [9] LEE Y C., Low-frequency membrane tension measurement of framed membranes in semiconductor manufacturing[J], Sensors and Actuators, A Physical, 355, (2023)
  • [10] QIU L R, CUI H, WANG Y, Et al., Research progress on high resolution laser differential confocal Raman spectroscopy, Acta Optica Sinica, 43, 15, (2023)