Research Progress of MPCVD Homogeneous Epitaxial Single-crystal Diamond

被引：0
作者：
Dong H. [1 ]
Ren Y. [2 ]
Zhang G. [1 ]
机构：
[1] Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Liaoning, Dalian
[2] School of Materials Science and Engineering, Henan University of Technology, Zhengzhou
来源：
Cailiao Daobao/Materials Reports | 2023年 / 37卷 / 16期
关键词：
abutment structure design; application field; growth process; homoepitaxy; MPCVD; single crystal diamond;
D O I：
10.11896/cldb.21100019
中图分类号：
学科分类号：
摘要：
The microwave plasma chemical vapor deposition (MPCVD) method is considered one of the most promising techniques for preparing large-size and high-quality epitaxial single-crystal diamonds. In this paper, the growth mechanism and the latest progress of MPCVD homogeneous epitaxial single crystal diamonds are briefly introduced, and then the work of preparing large-size and high-quality single crystal diamonds by MPCVD method in seed crystal screening and pretreatment, substrate structure design, and growth process exploration is emphatically described. The applications of MPCVD high-quality single-crystal diamonds in the fields of mechanics, thermal, optics, and electronics are introduced, and the application prospects of single-crystal diamonds in the future are forecasted. © 2023 Cailiao Daobaoshe/ Materials Review. All rights reserved.
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