Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition

被引：0
|
作者：
Choi, Ji Woon [1 ]
Ryu, Jin Joo [1 ,2 ]
Song, Wooseok [1 ,3 ]
Kim, Gun Hwan [2 ,4 ]
Chung, Taek-Mo [1 ,5 ]
机构：
[1] Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Daejeon 34114, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
[3] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 16149, South Korea
[4] Yonsei Univ, Dept Syst Semicond Engn, Seoul 03722, South Korea
[5] Univ Sci & Technol UST, Dept Chem Convergence Mat, 217 Gajeong Ro, Daejeon 34113, South Korea
来源：
CERAMICS INTERNATIONAL | 2024年 / 50卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
Transparent conducting oxide; Al-doped ZnO; Atomic layer deposition; Work function; Schottky contact; ZINC-OXIDE; TRANSPARENT; TRANSPORT; ELECTRODE;
D O I：
10.1016/j.ceramint.2024.09.132
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A series of 150-nm-thick Al-doped ZnO (AZO) thin films with various Al doping concentrations were deposited by atomic layer deposition technique to determine their applicability in transparent electronic devices. For incorporation into transparent electrodes, the electrical properties of AZO films must be modulated to minimize the parasitic effect. The results show that AZO thin films with various Al dopant concentrations had different work- functions and electrical contact properties, while the other physical characteristics were not significantly changed. Hence, AZO thin films can be used as transparent conducting oxide materials and are potential alternatives for the currently used indium-tin-oxide (ITO) thin films.
引用
收藏
页码：48843 / 48848
页数：6
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