Seed-Crystal-Assisted Space-Confined Growth of FASnI3 Quasi-Single-Crystal Thick Films and Their Photodetection Characteristics

被引:6
作者
Gao, Weiyin [1 ,2 ,3 ]
Liu, Xin [1 ,2 ]
Jin, Hangfan [1 ,2 ]
Li, Wangyue [1 ,2 ]
Wang, Xiaobo [1 ,2 ]
Huang, Rui [1 ,2 ]
Xing, Gang [1 ,2 ]
Dong, He [1 ,2 ]
Zhou, Yipeng [1 ,2 ]
Wu, Zhongbin [1 ,2 ]
Ran, Chenxin [1 ,2 ]
机构
[1] Northwestern Polytech Univ, Frontiers Sci Ctr Flexible Elect, Xian Inst Flexible Elect IFE, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, Xian Inst Biomed Mat & Engn, Xian 710072, Peoples R China
[3] Xian Shiyou Univ, Coll New Energy, Xian 710065, Peoples R China
基金
中国博士后科学基金;
关键词
PEROVSKITES; STRATEGY;
D O I
10.1021/acsenergylett.4c01596
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Sn-based perovskites are ideal eco-friendly candidates as an alternative to Pb-based ones in next-generation optoelectronics. However, a polycrystalline Sn-based perovskite thin film deposited from the spin-coating process suffers from high defect density and poor chemical stability, causing inferior performance of optoelectronic devices. Herein, we report the fabrication of a compact FASnI(3) quasi-single-crystal (QSC) thick film by developing a seed-crystal-assisted space-confined (SSG) strategy. The crystal growth dynamics in the SSG process is identified to be crystal size-dependent Ostwald ripening, and the key parameters are carefully investigated. After optimization, a compact n-type FASnI(3) QSC thick film can be produced with exceptional properties, including thickness of 12 mu m, crystal size of 36.63 +/- 12.24 mu m, defect density of 5.68 x 10(12) cm(-3), and charge mobility of 10.1 cm(2) V-1 s(-1). The corresponding photodetector exhibits self-driven detection ability and detectivity of 10(10) Jones at low bias of 0.1 V. This work opens up a new avenue for developing high-performing Sn-based optoelectronic devices.
引用
收藏
页码:5045 / 5055
页数:11
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