Plasma-assisted atomic layer deposition of transition metals and their carbides

被引：0

作者：

Guo Z. ^{[1
]}

Wang X. ^{[1
]}

机构：

[1] School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen

来源：

Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica | 2021年 / 51卷 / 06期

关键词：

Atomic layer deposition; Carbides; Films; Plasma-assisted; Transition metals;

D O I：

10.1360/SST-2020-0342

中图分类号：

学科分类号：

摘要：

Thin films of transition metals and their carbides are widely used in the fields of microelectronics, energy, and catalysis. Plasmaassisted atomic layer deposition (P-ALD) can generate highly reactive species and is characteristic of low deposition temperature and completeness of reactions; therefore, P-ALD is an important technique to prepare continuous, conformal, high-quality nanofilms of transition metals and their carbides on complex 3D-structured substrates. This study first introduces the basic principles of the P-ALD technology. Then, it reviews the current research progress of P-ALD for transition metals and their carbides, with particular highlights on the advantages of reducing deposition temperature, shortening nucleation period, enhancing reaction activity, and improving deposition rate and film purity. Lastly, it provides perspectives on the future directions of the P-ALD technology. © 2021, Science Press. All right reserved.

引用

页码：637 / 647

页数：10

共 70 条

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