A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed

被引：0

作者：

Kandpal J. ^{[1
]}

Kumar A. ^{[2
]}

机构：

[1] Department of Electronics and Communication Engineering, Graphic Era Hill University, Uttarakhand, Dehradun

[2] Department of Electronics and Communication Engineering, National Institute of Technology, Delhi

来源：

International Journal of High Speed Electronics and Systems | 2024年 / 33卷 / 01期

关键词：

BJT; CMOS; HEMT; MOSFET;

D O I：

10.1142/S0129156424500010

中图分类号：

学科分类号：

摘要：

GaN-based solutions can handle emerging technological demands from today's fast-changing electronics industry. AlGaN/GaN heterostructures offer the possibility of a variety of applications. The primary issues in commercializing GaN-based technology are reliability and performance enhancement. This research focuses on recent improvements in AlGaN/GaN-based high-electron-mobility transistors (HEMTs) for diverse high-speed applications. This review will assist researchers in gathering all relevant knowledge on AlGaN/GaN HEMT structure in one location, allowing them to focus on developing high-speed applications. © 2024 World Scientific Publishing Company.

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