A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed

被引：0
|
作者：
Kandpal J. [1 ]
Kumar A. [2 ]
机构：
[1] Department of Electronics and Communication Engineering, Graphic Era Hill University, Uttarakhand, Dehradun
[2] Department of Electronics and Communication Engineering, National Institute of Technology, Delhi
来源：
International Journal of High Speed Electronics and Systems | 2024年 / 33卷 / 01期
关键词：
BJT; CMOS; HEMT; MOSFET;
D O I：
10.1142/S0129156424500010
中图分类号：
学科分类号：
摘要：
GaN-based solutions can handle emerging technological demands from today's fast-changing electronics industry. AlGaN/GaN heterostructures offer the possibility of a variety of applications. The primary issues in commercializing GaN-based technology are reliability and performance enhancement. This research focuses on recent improvements in AlGaN/GaN-based high-electron-mobility transistors (HEMTs) for diverse high-speed applications. This review will assist researchers in gathering all relevant knowledge on AlGaN/GaN HEMT structure in one location, allowing them to focus on developing high-speed applications. © 2024 World Scientific Publishing Company.
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