Design and fabrication of tetradymites-based vertically oriented single and multilayer thin-film thermoelectric generators

被引:0
作者
Mbaye, Mamadou T. [1 ]
Pradhan, Sangram K. [1 ]
Bahoura, Messaoud [1 ]
机构
[1] Norfolk State Univ, Ctr Mat Res, 700 Pk Ave, Norfolk, VA 23504 USA
关键词
SEEBECK COEFFICIENT; ELECTRICAL-CONDUCTIVITY; BISMUTH TELLURIDE; VOLTAGE REFERENCE;
D O I
10.1063/5.0219293
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Tetradymites-based thermoelectric materials and devices have received renewed attention due to their engineering and design flexibility, large scalability, and commercial viability in producing electricity from waste heat for niche applications in small power generation and micro refrigeration. In fact, most commercially available bulk thermoelectric generators (TEGs) are made from tetradymites. In contrast to their bulk counterparts, thin-film vertical TEGs have not been widely adopted. This can be attributable to complexities in design and fabrication methodologies, device measurement challenges, and the hurdle of maintaining a large enough temperature gradient for optimal device performance. In this study, we utilize a facile approach for the design, fabrication, and characterization of tetradymite-based n-type Bi2Te3 and p-type Sb2Te3 single-layer thermoelectric generators, as well as n-type Bi2Te3/Bi2Te2.83Se0.17 and p-type Sb2Te3/Bi0.4Sb1.6Te3 alternating multilayer superlattice TEGs. State-of-the-art characterization techniques were employed to investigate the structural, chemical, and thermoelectric properties of the materials. XRD analysis showed a preferential orientation along the (100) plane with a high intensity peak at 2 theta = 25.5 degrees, and XPS spectra exhibited a high-resolution peak at 531.5 eV corresponding to the Bi 4f(7/2) core level. The structural data analysis confirmed the dominant metallic phase of the materials as well as their high crystalline nature. Device characterization showed that the multilayer device performed better than the single-layer devices with a recorded voltage, power, and power density of 11 mV, 12 pW, and 15.87 mW/m(3) at Delta T = 18 degrees C, respectively, in comparison to 9.4 mV, 7.8 pW, and 10.31 mW/m(3) for the most performing single-layer devices.
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页数:15
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