共 50 条
- [42] Effect of Substrate-surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE SMART MATERIALS, 2008, 55-57 : 825 - +
- [43] Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates NANOSCALE RESEARCH LETTERS, 2009, 4 (07): : 689 - 693
- [44] Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates Nanoscale Research Letters, 4
- [47] Effect of periodic interruption of the atmospheric-pressure MOVPE growth of InAs/GaAs quantum dots on their morphology and optoelectronic spectra Technical Physics Letters, 2009, 35 : 60 - 62
- [50] Control of indium surface segregation in GaAs layer on InGaP grown by MOVPE PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 3 - 8