Zn Doping Effect on Surface Morphology of Metamorphic InAs on GaAs Grown by MOVPE

被引:0
|
作者
Nakagawa, Shota [1 ]
Imamura, Yuki [1 ]
Hirata, Yasushi [1 ]
Maeda, Koji [1 ]
Arai, Masakazu [1 ]
机构
[1] University Of Miyazaki, Faculty Of Engineering, Miyazaki,889-2192, Japan
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Surface roughness
引用
收藏
相关论文
共 50 条
  • [21] InAs quantum dots grown by MOCVD in GaAs and metamorphic InGaAs matrixes
    Salii, R. A.
    Kalyuzhnyy, N. A.
    Kryzhanovskaya, N. V.
    Maximov, M. V.
    Mintairov, S. A.
    Nadtochiy, A. M.
    Nevedomskiy, V. N.
    Zhukov, A. E.
    18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [22] Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers
    Paul, Matthias
    Olbrich, Fabian
    Hoeschele, Jonatan
    Schreier, Susanne
    Kettler, Jan
    Portalupi, Simone Luca
    Jetter, Michael
    Michler, Peter
    APPLIED PHYSICS LETTERS, 2017, 111 (03)
  • [23] InAs/GaAs multiple quantum dot structures grown by LP-MOVPE
    Pangrác, J
    Oswald, J
    Hulicius, E
    Melichar, K
    Vorlícek, V
    Drbohlav, I
    Simecek, T
    THIN SOLID FILMS, 2000, 380 (1-2) : 101 - 104
  • [24] Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Hazdra, P.
    Voves, J.
    Oswald, J.
    Kuldova, K.
    Hospodkova, A.
    Hulicius, E.
    Pangrac, J.
    MICROELECTRONICS JOURNAL, 2008, 39 (08) : 1070 - 1074
  • [25] InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
    Hazdra, P
    Voves, J
    Oswald, J
    Hulicius, E
    Pangrác, J
    Simecek, T
    JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 328 - 332
  • [26] Correlation between extended defects and surface morphology in MBE grown InAs/GaAs heterostructures
    Bruni, MR
    Padeletti, G
    Simeone, MG
    Francesio, L
    Franzosi, P
    Gennari, S
    Nasi, L
    Salviati, G
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 337 - 342
  • [27] THE EFFECTS OF SUBSTRATE MISORIENTATION ON SILICON DOPING EFFICIENCY IN MOVPE GROWN GAAS
    THOMPSON, AG
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 457 - 462
  • [28] SILICON ATOMIC PLANE DOPING IN MBE GROWN INAS/GAAS
    WILLIAMS, RL
    COLERIDGE, P
    WASILEWSKI, ZR
    DION, M
    SACHRAJDA, A
    ROLFE, S
    SOLID STATE COMMUNICATIONS, 1991, 78 (06) : 493 - 497
  • [29] Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE
    Al-Khafaji, MA
    Cullis, AG
    Hopkinson, M
    Mowbray, DJ
    Skolnick, MS
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 111 - 116
  • [30] ON THE MORPHOLOGY OF SB-DOPED GAAS-LAYERS GROWN BY MOVPE
    YAKIMOVA, R
    PASKOVA, T
    TRIFONOVA, EP
    THIN SOLID FILMS, 1995, 265 (1-2) : 123 - 128