Synergistic Schottky contacts & diatomic doping in Cr/P-MoS2@Ti3C2Tx with boosted energy storage performance

被引:1
作者
Liu, Yanan [1 ]
Wang, Luyao [1 ]
Zhao, Yuanbo [1 ]
Chen, Yanan [1 ]
Li, Wenhui [1 ]
Xing, Hongna [1 ]
Feng, Juan [1 ]
Zong, Yan [1 ]
Zhu, Xiuhong [1 ]
Li, Xinghua [1 ]
Zheng, Xinliang [1 ]
机构
[1] Northwest Univ, Sch Phys, Xian 710069, Peoples R China
关键词
MoS2; Schottky contacts; Diatomic doping; DFT calculations; Energy storage performance; HYDROGEN EVOLUTION; DOPED MOS2; COMPOSITES; ELECTRODES; HETEROSTRUCTURES; SUPERCAPACITOR; NANOSHEETS; 1T-MOS2;
D O I
10.1016/j.electacta.2024.145128
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Molybdenum disulfide (MoS2), despite its promising attributes, suffers from low conductivity and aggregation. Herein, we introduce a novel approach that integrates Schottky contacts with Cr/P diatomic doping in MoS2@Ti3C2Tx, significantly enhancing its performance. The Schottky contacts effectively suppress aggregation and accelerate interfacial charge transfer, while Cr/P doping boosts conductivity, active sites, and stability. As a result, the Cr/P-MoS2@Ti3C2Tx electrode exhibits a specific capacitance of 650 F g(-1) at 1 A g(-1), which is fourfold higher than that of pristine MoS2. When assembled into an asymmetric supercapacitor (Cr/P-MoS2@Ti3C2Tx//AC ASC), the device achieves a peak energy density of 32 Wh kg(-1) at 303 W kg(-1), maintaining 85% capacitance retention after 10,000 cycles with an impressive coulombic efficiency of 97%. Furthermore, the density functional theory (DFT) calculations validate the beneficial effects of Schottky contacts and diatomic doping on the improved energy storage performance of Cr/P-MoS2@Ti3C2Tx. This work demonstrates the promising potential of the material for applications in high-performance supercapacitors (SCs).
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页数:12
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