Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy

To achieve monolithic integration of Si-waveguide-coupled III-V laser diodes, it is important to establish a method of growing high-quality III-V materials on large Si wafers without a thick buffer layer. Here, the lateral aspect ratio trapping (LART) method has recently been attracting attention because of its potential for integrating large-area and high-quality III-V films on (001)-oriented silicon-on-insulator (SOI) substrates. In this paper, we report a detailed microstructural analysis of InP films that were fabricated on (001) SOI substrates by using metal-organic vapor-phase epitaxy and the LART method. The obtained films had an area of around 50 x 4 mu m(2), which is large enough for them to be used as templates in photonics device fabrication. Transmission electron microscopy revealed that propagation of threading dislocations in the Si/InP interface region was suppressed. However, the films tended to contain other planar defects, such as stacking faults, rotational twin boundaries, and anti- phase boundaries. We discuss the mechanisms underlying the generation of these defects and approaches to suppressing their formation.