Nonvolatile logic inverters based on 2D CuInP2S6 ferroelectric field effect transistors

With the capability of in-memory computing, integrated nonvolatile logic devices can mitigate the back-and-forth movement of data between storage and logic units, thus effectively enhancing computational speed and reducing power consumption. In this work, two-dimensional (2D) CuInP2S6, which reveals robust polarization within a few nanometer thicknesses, was utilized as gate dielectric for ferroelectric field effect transistor (FeFET). Device with a ReS2 channel demonstrated a high on/off ratio of current of 105, accompanied by a substantial hysteresis window of 2.8 V. Additionally, ReS2 FETs, gated with an h-BN layer, exhibited a switch ratio of 108 and minimal hysteresis of 61.6 mV at room temperature, attributed to the atomically flat heterointerface with negligible traps. Leveraging the performance of these devices enabled the creation of a nonvolatile logic inverter, wherein the ReS2/h-BN FET acts as the load transistor, and ReS2/h-BN/CIPS FeFET serves as the driving unit. This configuration stably operates with low power consumption of 0.45 mu W and outstanding retention exceeding 1000 s. This work presents a viable device architecture for designing nonvolatile logic circuits applicable in in-memory computing.