Study on Composite Dielectric Encapsulation Materials for High Voltage Power Device Packaging

被引:0
|
作者
Li J. [1 ]
Mei Y. [2 ]
Liang Y. [1 ]
Tang X. [3 ]
Lu G. [4 ]
机构
[1] School of Materials Science and Engineering, Tianjin University, Tianjin
[2] School of Electrical Engineering, Tiangong University, Tianjin
[3] State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd, Beijing
[4] Bradley Department of Electrical and Computer Engineering, Virginia Tech University, Blacksburj, 24061, VA
关键词
Conductivity nonlinearity; High-voltage insulation; Partial discharge; Power module; SiC device packaging;
D O I
10.19595/j.cnki.1000-6753.tces.210049
中图分类号
学科分类号
摘要
The packaging insulation material is the most important part in power electronic devices, because it limits the applicability of the power devices in the trend of high voltage. In this paper, silicone gel composites with nonlinear electrical conductivity were prepared by doping silicon carbide nanoparticles with the silicone gel. The effects of the filler content and operating temperature on the DC conductance of the composites were discussed experimentally. Power modules were demonstrated using the composites for further partial discharge (PD) testing. The PD initial voltage of the power modules were improved in the proposed way. The results showed that the electric field distribution can be significantly homogenized by the composite with the 60vol% filler in the power module. The partial discharge initial voltage can be increased by 42.03%. Thermal oxygen aging testing and thermal shock testing were also carried out to verify the long-term reliability of the insulation composites. © 2022, Electrical Technology Press Co. Ltd. All right reserved.
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页码:786 / 792
页数:6
相关论文
共 21 条
  • [1] Wang Kunshan, Xie Lijun, Jin Rui, Recent development and application prospects of IGBT in flexible HVDC power system, Automation of Electric Power Systems, 40, 6, pp. 139-143, (2016)
  • [2] Ji Shiqi, Zhang Zheyu, Wang F., Overview of high voltage SiC power semiconductor devices: development and application, CES Transactions on Electrical Machines and Systems, 1, 3, pp. 254-264, (2017)
  • [3] Pala V, Brunt E V, Cheng L, Et al., 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 449-454, (2014)
  • [4] Dimarino C M, Mouawad B, Johnson C M, Et al., 10-kV SiC MOSFET power module with reduced common-mode noise and electric field, IEEE Transactions on Power Electronics, 35, 6, pp. 6050-6060, (2020)
  • [5] Gao Jiacheng, Zhu Yongli, Zheng Yanyan, Et al., Pattern recognition of partial discharge based on hilbert marginal spectrum and sparse autoencoder-deep neural networks, Automation of Electric Power Systems, 43, 1, pp. 87-94, (2019)
  • [6] Mi Yan, Gui Lu, Liu Lulu, Et al., Partial discharge characteristics of epoxy resin needle-plate defect under exponential decay pulse and sinusoidal voltage, Transactions of China Electrotechnical Society, 35, 2, pp. 425-434, (2020)
  • [7] Hu Jun, Zhao Xiaolei, Yang Xiao, Et al., Improving the electric field strength distribution of cable terminals by stress cone of nonlinear conductivity material, High Voltage Engineering, 43, 2, pp. 398-404, (2017)
  • [8] Ghessemi M., Geometrical Techniques for electric field control in (ultra) wide bandgap power electronics modules, 2018 IEEE Electrical Insulation Conference (EIC), pp. 589-592, (2018)
  • [9] Hohlfeld O, Bayerer R, Hunger T, Et al., Stacked substrates for high voltage applications, 2012 7th International Conference on Integrated Power Electronics Systems (CIPS), pp. 1-4, (2012)
  • [10] Reynes H, Buttay C, Morel H., Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 404-410, (2017)