Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT

被引：0

作者：

Wu, Yanlin ^{[1
,2
]}

Yang, Junjie ^{[1
]}

Yu, Jingjing ^{[1
]}

Chang, Hao ^{[1
]}

Yang, Xuelin ^{[3
]}

Wang, Jinyan ^{[1
]}

Hao, Yilong ^{[1
]}

Shen, Bo ^{[3
]}

Zhou, David ^{[2
]}

Wang, Maojun ^{[1
]}

Wei, Jin ^{[1
]}

机构：

[1] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China

[2] Shenzhen Pinghu Lab, Shenzhen 518100, Peoples R China

[3] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 11期

关键词：

active-passivation p-GaN gate HEMT (AP-HEMT); E-mode; resistance distribution; temperature-dependent; ELECTRON-MOBILITY TRANSISTORS; SURFACE PASSIVATION; POWER TRANSISTOR; FIELD-PLATE; SUPPRESSION; DIODE;

D O I：

10.1149/2162-8777/ad905b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work investigates the resistance distribution of the E-mode GaN-on-Si active-passivation (AP) p-GaN gate high-electron- mobility transistor (HEMT) using the transfer length method (TLM). The AP-HEMT has a unique active-passivation layer that is electrically connected to the p-GaN gate and covers most area of the device. The active-passivation layer changes the way the 2DEG is generated in the device, so the constitution of the device R ON is expected to differ from the conventional p-GaN gate HEMT (Conv-HEMT). According to our study, the sheet resistance of the 2DEG under the active-passivation layer is lower than that of the access region, leading to the reduced R ON in AP-HEMT compared to Conv-HEMT. The temperature dependence of the resistance is also investigated. Additionally, AP-HEMT exhibits an improved reverse conduction performance across the temperature range of 25 degrees C to 150 degrees C, due to the reduced gate-to-drain resistance in the device.

引用

页数：7

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