Optimizing charge transport simulation for hybrid pixel detectors

被引:0
|
作者
Xie, X. [1 ]
Barten, R. [1 ]
Bergamaschi, A. [1 ]
Braham, B. [1 ]
Bruckner, M. [1 ]
Carulla, M. [1 ]
Dinapoli, R. [1 ]
Ebner, S. [1 ]
Ferjaoui, K. [1 ]
Greiffenberg, D. [1 ]
Hasanaj, S. [1 ]
Heymes, J. [1 ]
Hinger, V. [1 ]
King, T. [1 ]
Kozlowski, P. [1 ]
Lopez-Cuenca, C. [1 ]
Mezza, D. [1 ]
Moustakas, K. [1 ]
Mozzanica, A. [1 ]
Paton, K. A. [1 ]
Ruder, C. [1 ]
Schmitt, B. [1 ]
Sieberer, P. [1 ]
Thattil, D. [1 ]
Zhang, J. [1 ]
Frojdh, E. [1 ]
机构
[1] Paul Scherrer Inst, Ctr Photon Sci, Forschungsstr 111, CH-5232 Villigen, Switzerland
来源
JOURNAL OF INSTRUMENTATION | 2024年 / 19卷 / 10期
关键词
Charge transport and multiplication in solid media; Detector modelling and simulations II (electric fields; charge transport; multiplication and induction; pulse formation; electron emission; etc); ELECTRON; SILICON; PENETRATION;
D O I
10.1088/1748-0221/19/10/C10007
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
To enhance the spatial resolution of the M & Ouml;NCH 25 mu m pitch hybrid pixel detector, deep learning models have been trained using both simulation and measurement data. Challenges arise when comparing simulation-based deep learning models to measurement-based models for electrons, as the spatial resolution achieved through simulations is notably inferior to that from measurements. Discrepancies are also observed when directly comparing X-ray simulations with measurements, particularly in the spectral output of single pixels. These observations collectively suggest that current simulations require optimization. To address this, the dynamics of charge carriers within the silicon sensor have been studied using Monte Carlo simulations, aiming to refine the charge transport modeling. The simulation encompasses the initial generation of the charge cloud, charge cloud drift, charge diffusion and repulsion, and electronic noise. The simulation results were validated with measurements from the M & Ouml;NCH detector for X-rays, and the agreement between measurements and simulations was significantly improved by accounting for the charge repulsion.
引用
收藏
页数:11
相关论文
共 50 条
  • [31] Comparison of hybrid pixel detectors with Si and GaAs sensors
    Lindner, M
    Fischer, P
    Florin, S
    Göppert, R
    Hausmann, J
    Ludwig, J
    Runge, K
    Schwarz, C
    Söldner-Rembold, A
    Wermes, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01) : 63 - 73
  • [32] Simulation of GaAs 3-D pixel detectors
    Mathieson, K
    Bates, R
    Meikle, A
    O'Shea, V
    Passmore, MS
    Rahman, M
    Smith, KM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01) : 194 - 201
  • [33] Computational investigation of transport parameters of ions in gas-filled radiation detectors
    Kalkan, Yalcin
    Ari, Sedat
    Orak, Salim
    Veenhof, Rob
    JOURNAL OF INSTRUMENTATION, 2024, 19 (06):
  • [34] Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization
    Verbitskaya, E.
    Eremin, V.
    Zabrodskii, A.
    Luukka, P.
    JOURNAL OF INSTRUMENTATION, 2016, 11
  • [35] Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
    Hiti, B.
    Cindro, V.
    Gorisek, A.
    Hemperek, T.
    Kishishita, T.
    Kramberger, G.
    Kruger, H.
    Mandic, I.
    Mikuz, M.
    Wermes, N.
    Zavrtanik, M.
    JOURNAL OF INSTRUMENTATION, 2017, 12
  • [36] Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
    Munker, M.
    Benoit, M.
    Dannheim, D.
    Fenigstein, A.
    Kugathasan, T.
    Leitner, T.
    Pernegger, H.
    Riedler, P.
    Snoeys, W.
    JOURNAL OF INSTRUMENTATION, 2019, 14
  • [37] Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding
    Bronuzzi, J.
    Mapelli, A.
    Moll, M.
    Sallese, J. M.
    JOURNAL OF INSTRUMENTATION, 2016, 11
  • [38] Signal amplification in multistage charge collection process in Si detectors in situ irradiated at superfluid helium temperature
    Eremin, V
    Shepelev, A.
    Verbitskaya, E.
    JOURNAL OF INSTRUMENTATION, 2022, 17 (11)
  • [39] Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter
    Akchurin, N.
    Almeida, P.
    Altopp, G.
    Alyari, M.
    Bergauer, T.
    Brondolin, E.
    Burkle, B.
    Frey, W. D.
    Gecse, Z.
    Heintz, U.
    Hinton, N.
    Kuryatkov, V
    Lipton, R.
    Mannelli, M.
    Mengke, T.
    Paulitsch, P.
    Peltola, T.
    Pitters, F.
    Sicking, E.
    Spencer, E.
    Tripathi, M.
    Pinto, M. V. Barreto
    Voelker, J.
    Wang, Z.
    Yohay, R.
    JOURNAL OF INSTRUMENTATION, 2020, 15 (09):
  • [40] Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade
    Nellist, C.
    Dinu, N.
    Gkougkousis, E.
    Lounis, A.
    JOURNAL OF INSTRUMENTATION, 2015, 10