Thin-Film Engineering of Solution-Processable n-Type Silicon Phthalocyanines for Organic Thin-Film Transistors

被引：0

作者：

Cranston, Rosemary R. ^{[1
]}

Vebber, Mário C. ^{[1
]}

Berbigier, Jônatas Faleiro ^{[2
]}

Rice, Nicole A. ^{[1
]}

Tonnelé, Claire ^{[3
]}

Comeau, Zachary J. ^{[1
,4
]}

Boileau, Nicholas T. ^{[1
]}

Brusso, Jaclyn L. ^{[4
]}

Shuhendler, Adam J. ^{[4
]}

Castet, Frédéric ^{[5
]}

Muccioli, Luca ^{[5
,6
]}

Kelly, Timothy L. ^{[2
]}

Lessard, Benoît H. ^{[1
,7
]}

机构：

[1] Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa,ON,K1N 6N5, Canada

[2] Department of Chemistry, University of Saskatchewan, 110 Science Place, Saskatoon,SK,S7N 5C9, Canada

[3] Donostia International Physics Center, 4 Paseo Manuel de Lardizabal, Donostia,Euskadi,20018, Spain

[4] Department of Chemistry and Biomolecular Sciences, University of Ottawa, 150 Louis Pasteur, Ottawa,ON,K1N 6N5, Canada

[5] Institut des Sciences Moléculaires, Université de Bordeaux, 351 Cours de la Libération, Talence,33405, France

[6] Department of Industrial Chemistry, University of Bologna, 4 Viale Risorgimento, Bologna,40136, Italy

[7] School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Ave., Ottawa,ON,K1N 6N5, Canada

来源：

ACS Applied Materials and Interfaces | 2021年 / 13卷 / 01期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会; 加拿大健康研究院;

关键词：

Crystallinity - Thin film circuits - Coatings - Annealing - Silicon - Threshold voltage - Thin film transistors - Morphology - X ray scattering - Molecular orientation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Metal and metalloid phthalocyanines are an abundant and established class of materials widely used in the dye and pigment industry as well as in commercial photoreceptors. Silicon phthalocyanines (SiPcs) are among the highest-performing n-type semiconductor materials in this family when used in organic thin-film transistors (OTFTs) as their performance and solid-state arrangement are often increased through axial substitution. Herein, we study eight axially substituted SiPcs and their integration into solution-processed n-type OTFTs. Electrical characterization of the OTFTs, combined with atomic force microscopy (AFM), determined that the length of the alkyl chain affects device performance and thin-film morphology. The effects of high-temperature annealing and spin coating time on film formation, two key processing steps for fabrication of OTFTs, were investigated by grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) to elucidate the relationship between thin-film microstructure and device performance. Thermal annealing was shown to change both film crystallinity and SiPc molecular orientation relative to the substrate surface. Spin time affected film crystallinity, morphology, and interplanar d-spacing, thus ultimately modifying device performance. Of the eight materials studied, bis(tri-n-butylsilyl oxide) SiPc exhibited the greatest electron field-effect mobility (0.028 cm2 V-1 s-1, a threshold voltage of 17.6 V) of all reported solution-processed SiPc derivatives. © 2020 American Chemical Society.

引用

页码：1008 / 1020