Dual topological insulator with mirror symmetry protected helical edge states

被引:0
|
作者
Campos, Warlley H. [1 ,2 ]
Penteado, Poliana H. [1 ,3 ]
Zanon, Julian [4 ]
Junior, Paulo E. Faria [5 ]
Candido, Denis R. [6 ]
Egues, J. Carlos [1 ,3 ]
机构
[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[2] Johannes Gutenberg Univ Mainz, Inst fair Phys, D-55099 Mainz, Germany
[3] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
[4] Eindhoven Univ Technol, Dept Appl Phys & Sci Educ, NL-5612 AZ Eindhoven, Netherlands
[5] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[6] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
基金
巴西圣保罗研究基金会;
关键词
CRYSTAL-STRUCTURE; PHASE-TRANSITION;
D O I
10.1103/PhysRevB.110.195142
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the k <middle dot> p approach, here, we investigate the electronic band structure of a Na2CdSn triatomic layer and derive a low-energy 4x4 effective model consistent with all the symmetries of this material class. We obtain the effective Hamiltonian using the L & ouml;wdin perturbation theory, the folding-down technique, and the theory of invariants and determine its parameters by fitting our analytical dispersion relations to those of ab initio calculations. We then calculate the bulk topological invariants of the system and show that the Na2CdSn triatomic layer is a giant-gap (hundreds of millielectronvolts) quasi-two-dimensional DTI characterized by both spin and mirror Chern numbers - 2. In agreement with the bulk-boundary correspondence theorem, we find that a finite-width strip of Na2CdSn possesses two pairs of counterpropagating helical edge states per interface. We obtain analytical expressions for the edge state energy dispersions and wave functions, which are shown to agree with our numerical calculations. Our work opens an avenue for further studies of Na2CdSn as a potential DTI candidate with room-temperature applications in areas of technological interest, such as nanoelectronics and spintronics.
引用
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页数:17
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