Fast Prototyping of Two-Dimensional Nanoelectromechanical Resonators

被引：0

作者：

Liang Y. ^{[1
]}

Zhu J. ^{[1
]}

Xiao F. ^{[1
]}

Jiao C. ^{[1
]}

Xu B. ^{[1
]}

Xia J. ^{[1
]}

Wang Z. ^{[1
]}

机构：

[1] Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu

来源：

Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China | 2022年 / 51卷 / 03期

关键词：

Dry transfer; Nanodevice fabrication; Nanoelectromechanical resonator; Patterning electrodes;

D O I：

10.12178/1001-0548.2021399

中图分类号：

学科分类号：

摘要：

In this work, we report a multifunctional system for facile fabrication of 2D nanodevices. The system has advantages of achieving both the transfer process and electrodes deposition all using the same setup, and thus can efficiently prototyping nanodevices. Using this multifunctional fabrication system, we successfully fabricate WSe2 resonators and then measure the device performance. Our work shows great potential in realizing resonant 2D devices using this multifunctional nanodevice fabrication system. Copyright ©2022 Journal of University of Electronic Science and Technology of China. All rights reserved.

引用

页码：452 / 457

页数：5

共 20 条

[1] NOVOSELOV K S, JIANG D, SCHEDIN F, Et al., Two-dimensional atomic crystals, Proceedings of the National Academy of Sciences, 102, 30, pp. 10451-10453, (2005)
[2] BHIMANAPATI G R, KOZUCH D, ROBINSON J A., Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets, Nanoscale, 6, 20, pp. 11671-11675, (2014)
[3] WANG Q H, KALANTAR-ZADEH K, KIS A, Et al., Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nature Nanotechnology, 7, 11, pp. 699-712, (2012)
[4] LEE J, WANG Z, HE K, Et al., High frequency MoS2 nanomechanical resonators, ACS Nano, 7, 7, pp. 6086-6091, (2013)
[5] LEE J, WANG Z, HE K, Et al., Electrically tunable single-and few-layer MoS2 nanoelectromechanical systems with broad dynamic range, Science Advances, 4, 3, (2018)
[6] BUNCH J S, VANDERZANDE A M, VERBRIDGE S S, Et al., Electromechanical resonators from graphene sheets, Science, 315, 5811, pp. 490-493, (2007)
[7] FANG H, CHUANG S, CHANG T C, Et al., High-performance single layered WSe2 p-FETs with chemically doped contacts, Nano Letters, 12, 7, pp. 3788-3792, (2012)
[8] LIU W, KANG J, SARKAR D, Et al., Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors, Nano Letters, 13, 5, pp. 1983-1990, (2013)
[9] FALIN A, HOLWILL M, LYU H, Et al., Mechanical properties of atomically thin tungsten dichalcogenides: WS2, WSe2, and WTe2, ACS Nano, 15, 2, pp. 2600-2610, (2021)
[10] LEE J H, LEE E K, JOO W J, Et al., Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium, Science, 344, 6181, pp. 286-289, (2014)

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