Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

被引：1

作者：

Xi, Zhihao ^{[1
]}

Chen, Nan ^{[1
]}

Cai, Jincheng ^{[1
]}

Xu, Chao ^{[2
]}

Li, Shuti ^{[1
]}

Zheng, Shuwen ^{[1
]}

机构：

[1] South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528200, Peoples R China

[2] South China Normal Univ, Sch Chem & Environm, Key Lab Theoret Chem Environm, Minist Educ, Guangzhou 510006, Peoples R China

来源：

PHYSICS LETTERS A | 2024年 / 525卷

基金：

中国国家自然科学基金;

关键词：

Electronic structure; Transport properties; 2D Al (0.5) Ga- 1.5 O- 3; 2D In- 0.5 Ga (1.5) O- 3; DOPED BETA-GA2O3; GA2O3; OXIDES;

D O I：

10.1016/j.physleta.2024.129914

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, the band structures, density of states and transport properties of two-dimensional (2D) TM0.5Ga1.5O3 (TM=Al, Ga, In) are investigated by the first principle and the deformation potential theory. Both 2D Al0.5Ga1.5O3 and 2D In0.5Ga1.5O3 alloys tend to form under poor-oxygen conditions. Compared to bulk Ga2O3, the bandgap of 2D Ga2O3 is increased by 0.382 eV and its electron mobility is significantly increased from 143.352cm2<middle dot>V-1<middle dot>s-1 to 1486.638cm2<middle dot>V-1<middle dot>s-1. For 2D Al0.5Ga1.5O3, the bandgap and the electron effective mass are larger than those of 2D Ga2O3, but its electron mobility is reduced by >25%. In contrast, the bandgap of 2D In0.5Ga1.5O3 is narrower than that of 2D Ga2O3 while its electron mobility is increased by >52%, reaching 2262.901cm2<middle dot>V-1<middle dot>s-1. Therefore, 2D In0.5Ga1.5O3 has great potential to be used as a transport material for high-speed Ga2O3 electronic devices.

引用

页数：8

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