Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

被引：1

作者：

Xi, Zhihao ^{[1
]}

Chen, Nan ^{[1
]}

Cai, Jincheng ^{[1
]}

Xu, Chao ^{[2
]}

Li, Shuti ^{[1
]}

Zheng, Shuwen ^{[1
]}

机构：

[1] South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528200, Peoples R China

[2] South China Normal Univ, Sch Chem & Environm, Key Lab Theoret Chem Environm, Minist Educ, Guangzhou 510006, Peoples R China

来源：

PHYSICS LETTERS A | 2024年 / 525卷

基金：

中国国家自然科学基金;

关键词：

Electronic structure; Transport properties; 2D Al (0.5) Ga- 1.5 O- 3; 2D In- 0.5 Ga (1.5) O- 3; DOPED BETA-GA2O3; GA2O3; OXIDES;

D O I：

10.1016/j.physleta.2024.129914

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, the band structures, density of states and transport properties of two-dimensional (2D) TM0.5Ga1.5O3 (TM=Al, Ga, In) are investigated by the first principle and the deformation potential theory. Both 2D Al0.5Ga1.5O3 and 2D In0.5Ga1.5O3 alloys tend to form under poor-oxygen conditions. Compared to bulk Ga2O3, the bandgap of 2D Ga2O3 is increased by 0.382 eV and its electron mobility is significantly increased from 143.352cm2<middle dot>V-1<middle dot>s-1 to 1486.638cm2<middle dot>V-1<middle dot>s-1. For 2D Al0.5Ga1.5O3, the bandgap and the electron effective mass are larger than those of 2D Ga2O3, but its electron mobility is reduced by >25%. In contrast, the bandgap of 2D In0.5Ga1.5O3 is narrower than that of 2D Ga2O3 while its electron mobility is increased by >52%, reaching 2262.901cm2<middle dot>V-1<middle dot>s-1. Therefore, 2D In0.5Ga1.5O3 has great potential to be used as a transport material for high-speed Ga2O3 electronic devices.

引用

页数：8

共 39 条

[1] Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor [J].

Ahn, Jungho ;

Ma, Jiyeon ;

Lee, Doeon ;

Lin, Qiubao ;

Park, Youngseo ;

Lee, Oukjae ;

Sim, Sangwan ;

Lee, Kyusang ;

Yoo, Geonwook ;

Heo, Junseok .

ACS PHOTONICS, 2021, 8 (02) :557-566

[2] Shear-induced mechanical failure of β-Ga2O3 from quantum mechanics simulations [J].

An, Qi ;

Li, Guodong .

PHYSICAL REVIEW B, 2017, 96 (14)

[3] Mechanism Behind the Easy Exfoliation of Ga2O3 Ultra-Thin Film Along (100) Surface [J].

Barman, Sajib K. ;

Huda, Muhammad N. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2019, 13 (05)

[4] Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation [J].

Chi, Zeyu ;

Asher, Jacob J. ;

Jennings, Michael R. ;

Chikoidze, Ekaterine ;

Perez-Tomas, Amador .

MATERIALS, 2022, 15 (03)

[5] Investigations of the stability and electronic properties of two-dimensional Ga2O3 nanosheet in air from first-principles calculations [J].

Dong, Linpeng ;

Zhou, Shun ;

Xin, Bin ;

Yang, Chen ;

Zhang, Jin ;

Liu, Huan ;

Zhang, Lichun ;

Yang, Chuanlu ;

Liu, Weiguo .

APPLIED SURFACE SCIENCE, 2021, 537

[6] Modulation in structural and electronic properties of 2D Ga2O3 by chemical passivation [J].

Dong, Linpeng ;

Zhou, Shun ;

Gong, Lei ;

Wang, Wei ;

Zhang, Lichun ;

Yang, Chuanlu ;

Yu, Jianhui ;

Liu, Weiguo .

JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (36) :12551-12559

[7] β-Ga2O3 for wide-bandgap electronics and optoelectronics [J].

Galazka, Zbigniew .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (11)

[8] Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method [J].

Galazka, Zbigniew ;

Uecker, Reinhard ;

Klimm, Detlef ;

Irmscher, Klaus ;

Naumann, Martin ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Bertram, Rainer ;

Ganschow, Steffen ;

Bickermann, Matthias .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3007-Q3011

[9]

Ganguly S, 2023, PHYS STATUS SOLIDI-R, DOI 10.1002/pssr.202300296

[10] CRYSTAL STRUCTURE OF BETA-GA2O3 [J].

GELLER, S .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (03) :676-684

← 1 2 3 4 →