Physics-based 2D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering

被引：0

作者：

Huang, Shijie ^{[1
,2
,3
]}

Guo, Jingrui ^{[1
,2
,3
]}

Xu, Lihua ^{[1
,3
]}

Wang, Lingfei ^{[1
,2
,3
]}

Li, Ling ^{[1
]}

机构：

[1] Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China

[2] University of Chinese Academy of Sciences, Beijing,100049, China

[3] Peng Cheng Laboratory, Shenzhen,518038, China

来源：

Japanese Journal of Applied Physics | 2022年 / 61卷 / 10期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Poisson equation

引用