Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

被引：2

作者：

Greco, G. ^{[1
]}

Fiorenza, P. ^{[1
]}

Giannazzo, F. ^{[1
]}

Vivona, M. ^{[1
]}

Venuto, C. ^{[2
]}

Iucolano, F. ^{[2
]}

Roccaforte, F. ^{[1
]}

机构：

[1] CNR IMM, I-95121 Catania, Italy

[2] STMicroelectronics, I-95121 Catania, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 10期

关键词：

Logic gates; MODFETs; HEMTs; Stress; Thermionic emission; Current density; Reliability; Gallium nitride; normally-off HEMT; p-GaN; RELIABILITY; TECHNOLOGY; TRANSPORT; PHYSICS;

D O I：

10.1109/LED.2024.3438807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current transport mechanism at metal gate/p-GaN interface in p-GaN HETMs has been investigated. Space Charge Limited Current (SCLC) well describes the behaviour of current density (J(G)) at lower applied bias (V (G)<6 V), while Thermionic Field Emission (TFE) represents the dominant current mechanism at higher V-G. Then, p-GaN gate reliability was investigated by time-to-failure (TTF) analysis carried out at constant positive V-G. In particular, the devices' lifetime as function of the applied V-G was described considering the J(G)-V-G dependence according the TFE model. In this way, a maximum V-G for 10-year lifetime (V (10years)(Gmax)) of 8.5 V has been estimated, significantly higher than that extracted by conventional E-model (7 V).

引用

收藏

页码：1724 / 1727

页数：4

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