Thick waveguides of low-stress stoichiometric silicon nitride on sapphire (SiNOS)

被引：1
|
作者：
Martinussen, Simen [1 ,2 ]
Berenschot, Erwin [3 ]
Bonneville, Dawson [1 ]
Wang, Kai [1 ]
Dijkstra, Meindert [1 ]
Tas, Niels [3 ]
Garcia-blanco, Sonia [1 ]
Tiggelaar, Roald [4 ]
机构：
[1] Univ Twente, MESA Inst, Integrated Opt Syst, POB 217, NL-7500 AE Enschede, Netherlands
[2] Epiphany, Hengelosestr 500, NL-7521 AN Enschede, Netherlands
[3] Univ Twente, MESA Inst, Mesoscale Chem Syst, POB 217, NL-7500 AE Enschede, Netherlands
[4] Univ Twente, MESA Inst, NanoLab Cleanroom, POB 217, NL-7500 AE Enschede, Netherlands
来源：
OPTICS EXPRESS | 2024年 / 32卷 / 21期
关键词：
FREQUENCY COMB GENERATION; HIGH-CONFINEMENT; SUPERCONTINUUM GENERATION; FABRICATION; RESONATORS; PHOTONICS;
D O I：
10.1364/OE.536578
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Low-stress stoichiometric silicon nitride (Si3N4) waveguides with an unprecedented thickness of up to 1350 nm and a width in the range of 2.2 - 2.7 mu m are fabricated using a single LPCVD step on sapphire substrates (SiNOS). Optical characterization of proof-of-concept similar to 1.35 mu m thick waveguides show propagation losses in the order of 0.30 +/- 0.01 dB/cm at 1600 nm. The proposed process offers a simple route to high confinement Si3N4 waveguides, enabling applications in nonlinear and mid-IR integrated photonics. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码：36835 / 36847
页数：13
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