Si CMOS Ka-band millimeter wave power amplifier

被引：0
|
作者：
Tao L. [1 ,2 ]
Tian T. [1 ,2 ]
机构：
[1] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai
[2] University of Chinese Academy of Science, Beijing
来源：
Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2021年 / 48卷 / 02期
关键词：
CMOS integrated circuits; Millimeter waves; Monolithic microwave integrated circuit; Power amplifiers;
D O I：
10.19665/j.issn1001-2400.2021.02.024
中图分类号：
学科分类号：
摘要：
In order to meet the requirement of higher transmission power for the millimeter wave radar or communication system, a Ka band power amplifier is designed based on the 65 nm bulk Si CMOS process.This power amplifier works at 30~32 GHz, and consists of two-stage CASCODE differential pairs structure amplifiers.Neutralizing capacitances are used to enhance its stability, and the on chip matching network is realized based on transformer coils.After testing, the maximum output power of the power amplifier in the operating frequencies is 16.3 dBm.Its maximum PAE is 16.9 %, -1 dB compression point is 13.2 dBm, and power gain is 23.6 dB.The power amplifier chip presented in this paper has advantages in power gain and chip area utilization, which provides a feasible high power output design example for the silicon-based millimeter wave power amplifier. © 2021, The Editorial Board of Journal of Xidian University. All right reserved.
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页码：190 / 196
页数：6
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