This article reports an aluminum (Al)/copper oxide (CuO):molybdenum disulfide (MoS2)/indium 2 ) tin oxide (ITO)-coated polyethylene terephthalate (PET) structure-based broadband photodetector (PD). In the device, CuO:MoS2 nanocomposite prepared through the dispersion method acts as an active layer. The spin coating technique was employed to deposit the nanocomposite film upon ITO-coated PET, followed by the Al contacts deposition by means of a thermal evaporation unit. The fabricated PD shows a broadband response with maximum responsivity RSRS (A/W) of 1.23, 289.08, and 217.58 A/W at 300 nm (UV), 550 nm (visible), and 850 nm (IR) for - 1 V bias at a fixed optical power of 0.118 mu W. For optoelectronic applications, the CuO:MoS2 nanocomposite exhibits promising properties.
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Ren Zhi-hui
Zhong Mian-zeng
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Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Zhong Mian-zeng
Yang Jue-han
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Yang Jue-han
Wei Zhong-ming
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China