ACCURATE MONITORING METHOD OF SiC MOSFET THRESHOLD VOLTAGE CONSIDERING THERMOELECTRIC COUPLING EFFECT

被引：0

作者：

Du M. ^{[1
]}

Xin J. ^{[1
]}

Yao W. ^{[2
]}

Ouyang Z. ^{[1
,3
]}

机构：

[1] Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin

[2] Tianjin Zhongke Huaying Technology Co.，Ltd., Tianjin

[3] Department of Electrical Engineering, Technical University of Denmark, Lyngby

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2023年 / 44卷 / 02期

关键词：

bias temperature instability; condition monitoring; power MOSFET; silicon carbide; temperature- sensitive electrical parameters;

D O I：

10.19912/j.0254-0096.tynxb.2021-1124

中图分类号：

学科分类号：

摘要：

This paper studies the temperature dependence of threshold voltage，body diode voltage，drain-source on-state resistance in SiC MOSFET，analyzes the effect of bias temperature instability（BTI）on VTH ，and explores the mechanism of its effect on temperature-sensitive electrical parameters（TSEPs）. In addition，considering the influence of temperature and BTI on VTH ，a method for threshold voltage monitoring employing SiC MOSFET body diode voltage under body effect at low current injection is proposed. The proposed method can monitor the threshold voltage at different junction temperatures（ Tj ）and provides help for correcting the accuracy of junction temperature measurement by other TSEPs. The theoretical and experimental results demonstrate the feasibility of the proposed method. © 2023 Science Press. All rights reserved.

引用

页码：445 / 452

页数：7

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