Thermally-induced diffusion and structural phase transitions in Pt/Mn and Pt/Mn/Pt thin films

被引:0
作者
Voloshko, Svitlana [1 ]
Kruhlov, Ivan [1 ]
Pedan, Roman [1 ]
Garrido-Segovia, Maria [2 ,3 ]
Orlov, Andrii [1 ]
Dubikovskyi, Oleksandr [1 ,4 ]
Garcia-Martin, Jose Miguel [3 ]
Kaidatzis, Andreas [5 ]
Vladymyrskyi, Igor [1 ]
机构
[1] Natl Tech Univ Ukraine, Igor Sikorsky Kyiv Polytech Inst, Prospect Beresteiskyi 37, UA-03056 Kyiv, Ukraine
[2] UCM, Dept Fis Mat, Fac Ciencias Fis, Madrid 28040, Spain
[3] IMN CNM, Inst Micro & Nanotecnol, CSIC CEI UAM, Isaac Newton 8, Tres Cantos 28760, Spain
[4] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Physi, Prospect Nauky 41, UA-03680 Kiev, Ukraine
[5] NCSR Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece
关键词
diffusion; antiferromagnetic thin films; interfaces; segregation; phase formation; chemical ordering; CRYSTALLINITY;
D O I
10.1088/1402-4896/ad852a
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate the possibility of diffusion formation of the chemically ordered L1 0-MnPt phase through the vacuum annealing of Pt(24 nm)/Mn(20 nm) and Pt(12 nm)/Mn(20 nm)/Pt(12 nm) layered stacks at 400 degrees C for 30 min. For the bi-layered stack annealed at 400 degrees C, the effect of Pt atoms segregation at the film/substrate interface was detected, which remained after annealing even at higher temperatures (500 degrees C and 600 degrees C) and prevented the whole homogenization of the chemical composition through the film depth. By contrast, for the tri-layered stack annealed at 400 degrees C, the presence of the additional Pt bottom layer enabled to change the rate and mechanism of reactive diffusion, leading to homogeneous distribution of components and enhanced crystallinity of the ordered L1 0-MnPt phase compared to the bi-layered sample. An explanation of the obtained experimental data is provided based on the fundamentals of mass transfer theory and its quantitative parameters (e.g. activation energy and diffusion coefficients).
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页数:14
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