Gate-tunable in-sensor computing vdW heterostructures for infrared photodetection

被引:0
作者
Xu, Hangyu [1 ,2 ]
Huang, Chenyu [1 ,2 ]
Xu, Tengfei [1 ]
Liu, Zexi [1 ]
Zhao, Rong [1 ]
He, Jiale [1 ]
Zhao, Tiange [1 ]
Fu, Xiao [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
基金
上海市自然科学基金;
关键词
In-sensor computing; Gate-tunable; Convolutional preprocessing; Infrared photodetection;
D O I
10.1016/j.infrared.2024.105611
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Convolutional preprocessing is feasible for feature extraction and accurate recognition. In-sensor computing, which requires a photodetector with a computation function, is a potential candidate for hardware-implemented preprocessing. However, limited by the high carrier concentration in infrared sensing materials, reconfigurable manipulation of photocarriers is hardly complemented. Thus, previous works mostly focused on preprocessing in the visible range. Here, we propose a gate-tunable BP/MoS2 heterostructure. With an elaborate design on the material's thickness, the depletion region can be precisely controlled, resulting in multiple and reconfigurable responsivity states. With a sharp and clean interface, our device shows strong linear dependence over the broadband spectrum, which is the prerequisite for constructing convolutional kernels. Furthermore, observing the maximum photocurrent in the Vg sweeping process demonstrates strong regulation of carrier concentration in the infrared sensing material, BP layer. Since it has superior performance in high linearity and multiple states construction, our device is suitable for realizing computation in photodetector for convolutional preprocessing, underscoring its superiority in intelligent infrared perception and preprocessing.
引用
收藏
页数:7
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