High-current, high-voltage AlN Schottky barrier diodes

被引：0

作者：

Quinones, C. E. ^{[1
]}

Khachariya, D. ^{[2
]}

Reddy, P. ^{[2
]}

Mita, S. ^{[2
]}

Almeter, J. ^{[1
]}

Bagheri, P. ^{[1
]}

Rathkanthiwar, S. ^{[1
]}

Kirste, R. ^{[2
]}

Pavlidis, S. ^{[3
]}

Kohn, E. ^{[2
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA

[2] Adroit Mat, Cary, NC 27518 USA

[3] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 10期

关键词：

GROWTH;

D O I：

10.35848/1882-0786/ad81c9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 m Omega cm(2)), high current density (>5 kA cm(-2)), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al0.75Ga0.25N ohmic contact layer grown on AlN substrates. A combination of simulation, current-voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10(4).

引用

页数：5

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