Performance Improvement for 3.3 kV 1000 A High-Power Density Full-SiC Power Modules With Sintered Copper Die Attach

To increase the power density of 3.3 kV full-silicon carbide (SiC) power modules, a sintered copper die attach and an SBD-less structure were combined to yield a 3.3 kV/1000 A full-SiC power module. The rated power density, which was defined as the product of the rated current and the rated voltage per footprint area, reached 47 kVA/cm2. This is an increase of 25% compared to that shown previously. The increase in the rated power density was achieved by combined features, which were a higher operation temperature Tj, max = 175.C achieved by improved reliability with sintered copper die attach, a decrease in the switching loss due to improved gate resistors within a module, and an increase in the gate voltage to 17 V. To demonstrate the reliability of the 1000 A and 175. C operation, a power cycling test, high-temperature reverse bias (HTRB) test and high-temperature high-humidity reverse bias (H3TRB) test were conducted. Static electrical characteristics, as well as switching performances, were demonstrated.