Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells

被引：0

作者：

Macco, Bart ^{[1
]}

van de Poll, Mike L. ^{[1
]}

van de Loo, Bas W.H. ^{[2
]}

Broekema, Tim M.P. ^{[1
]}

Basuvalingam, Saravana B. ^{[1
]}

van Helvoirt, Cristian A.A. ^{[1
]}

Berghuis, Wilhelmus J.H. ^{[1
]}

Theeuwes, Roel J. ^{[1
]}

Phung, Nga ^{[1
]}

Kessels, Wilhelmus M.M. ^{[1
]}

机构：

[1] Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven,MB,5600, Netherlands

[2] SALD B.V., Zwaanstraat 1, Eindhoven,CA,5651, Netherlands

来源：

Solar Energy Materials and Solar Cells | 2022年 / 245卷

关键词：

Atomic layer deposition;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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