Growth strategies for widening thick heavily boron-doped (113)-oriented CVD diamond

被引：0

作者：

Mesples-Carrere, R. ^{[1
]}

Issaoui, R. ^{[1
]}

Valentin, A. ^{[1
]}

Banaigs, L. ^{[1
]}

Brinza, O. ^{[1
]}

Benedic, F. ^{[1
]}

Achard, J. ^{[1
]}

机构：

[1] Univ Sorbonne Paris Nord, LSPM, CNRS, 99 Ave JB Clement, F-93460 Villetaneuse, France

来源：

关键词：

Single crystal CVD diamond; Boron-doping; Surface widening; Free-standing CVD plate; DENSITY;

D O I：

10.1016/j.diamond.2024.111659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present study, a growth strategy allowing widening thick heavily boron doped (113)-oriented diamonds is proposed. It relies on a geometrical model developed at the LSPM, which is used to visualize the evolution of the deposited crystal shape. This model helped us to identify the specific growth parameters allowing to slow down the growth rate along (113) direction and, at the same time, continuously increase the area of this crystalline face. Depositions have been carried out and has resulted in a significant increase of 145% of the top-surface area, giving a functional surface of 3.7mm in diameter after a growth of 930 mu m, starting from 2.3mm. The resistivity, measured by four-point probe system, reaches a value as low as 5m Omega.cm, which is comparable to the best results obtained on thick layers grown on the conventional (100) orientation.

引用

页数：7

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