A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse

被引：2

作者：

Lee, Dong Hyun ^{[1
,2
]}

Kim, Ji Eun ^{[3
]}

Cho, Yong Hyeon ^{[1
,2
]}

Kim, Sojin ^{[4
]}

Park, Geun Hyeong ^{[1
,2
]}

Choi, Hyojun ^{[1
,2
]}

Lee, Sun Young ^{[1
,2
]}

Kwon, Taegyu ^{[1
,2
]}

Kim, Da Hyun ^{[1
,2
]}

Jeong, Moonseek ^{[1
,2
]}

Jeong, Hyun Woo ^{[1
,2
]}

Lee, Younghwan ^{[5
]}

Lee, Seung-Yong ^{[4
]}

Yoon, Jung Ho ^{[6
]}

Park, Min Hyuk ^{[1
,2
,7
]}

机构：

[1] Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Coll Engn, Inter Univ Semicond Res Ctr, Seoul 08826, South Korea

[3] Korea Inst Sci & Technol KIST, Elect Mat Res Ctr, Seoul 02792, South Korea

[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

[5] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea

[6] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[7] Seoul Natl Univ, Inst Engn Res, Coll Engn, Gwanak Ro 1, Seoul 08826, South Korea

来源：

MATERIALS HORIZONS | 2024年 / 11卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

HAFNIUM OXIDE; THIN-FILMS; LOW-POWER; DEVICES; HFO2; RRAM;

D O I：

10.1039/d4mh00519h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A self-rectifying ferroelectric tunnel junction that employs a HfO2/ZrO2/HfO2 superlattice (HZH SL) combined with Al2O3 and TiO2 layers is proposed. The 6 nm-thick HZH SL effectively suppresses the formation of non-ferroelectric phases while increasing remnant polarization (P-r). This enlarged P-r modulates the energy barrier configuration, consequently achieving a large on/off ratio of 1273 by altering the conduction mechanism from off-state thermal injection to on-state Fowler-Nordheim tunneling. Moreover, the asymmetric Schottky barriers at the top TiN/TiO(2)and bottom HfO2/Pt interfaces enable a self-rectifying property with a rectifying ratio of 1550. Through calculations and simulations it is found that the device demonstrates potential for achieving an integrated array size exceeding 7k while maintaining a 10% read margin, and shows potential for application in artificial synapses for neuromorphic computing with an image recognition accuracy above 92%. Finally, the self-rectifying behavior and device-to-device variation reliability are confirmed in a 9 x 9 crossbar array structure.

引用

页码：5251 / 5264

页数：15

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