Effect of (Mg 1/2 W 1/2 ) 4+substitution on the structure and electrical properties of Bi4Ti3O12-based high-temperature piezoceramics

Bi 4 Ti 3- x (Mg 1/2 W 1/2 ) x O 12 (BTMW100x) x ) ceramics were synthesized using a direct reaction method combined with a two-step sintering technique. The study systematically investigated the effects of B-site equivalent substitution of (Mg 1/2 W 1/2 ) 4+ on BTMW100x x ceramics. The experimental results indicate that an appropriate amount of (Mg 1/2 W 1/2 ) 4+ doping effectively reduces grain thickness, enhances grain distribution uniformity, and decreases the concentration of oxygen vacancies. Consequently, these modifications lead to improved piezoelectric performance while maintaining a high Curie temperature. Notably, Bi 4 Ti 2.95 (Mg 1/2 W 1/2 ) 0.05 O 12 (BTMW5) ceramics exhibit excellent piezoelectric properties and thermal stability, with a piezoelectric coefficient of 23 pC/N and a Curie temperature of 683 degrees C. These findings suggest that BTMW5 ceramics are promising candidates for high- temperature piezoelectric applications.