Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

被引：0

作者：

Lapi, Agustin J. ^{[1
,2
,3
]}

Sofo-Haro, Miguel ^{[4
]}

Parpillon, Benjamin C. ^{[3
]}

Birman, Adi ^{[5
]}

Fernandez-Moroni, Guillermo ^{[3
,6
]}

Rota, Lorenzo ^{[7
]}

Bessia, Fabricio Alcalde ^{[8
]}

Gupta, Aseem ^{[7
]}

Blanco, Claudio R. Chavez ^{[2
,3
,9
]}

Chierchie, Fernando ^{[1
,2
]}

Segal, Julie ^{[7
]}

Kenney, Christopher J. ^{[7
]}

Dragone, Angelo ^{[7
]}

Li, Shaorui ^{[3
]}

Braga, Davide ^{[3
]}

Fenigstein, Amos ^{[5
]}

Estrada, Juan ^{[3
]}

Fahim, Farah ^{[3
]}

机构：

[1] Consejo Nacl Invest Cient & Tecn, Inst Inv Ingn Elect Alfredo Desages IIIE, RA-8000 Bahia Blanca, Argentina

[2] Univ Nacl Sur UNS, Dept Ingn Elect & Comp DIEC, RA-8000 Bahia Blanca, Argentina

[3] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[4] Inst Fis Enrique Gaviola Reactor Nucl CNEA CONICET, RA-5000 Cordoba, Argentina

[5] Tower Semicond, IL-2310502 Migdal Haaemek, Israel

[6] Univ Chicago, Dept Astron & Astrophys, Chicago, IL 60637 USA

[7] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[8] Inst Nanociencia & Nanotecnol CNEA CONICET, San Carlos De Bariloche, Argentina

[9] Univ Nacl Asuncion UNA, Fac Ingn, San Lorenzo 111421, Paraguay

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 11期

关键词：

Noise; Logic gates; Charge coupled devices; Photonics; Charge transfer; Electrons; Detectors; Transmission line matrix methods; Silicon; Semiconductor device measurement; Multiple nondestructive readout; single photon; skipper charge coupled devices (Skipper-CCDs) in CMOS; subelectron noise;

D O I：

10.1109/TED.2024.3463631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a 15 x 15 mu m(2) pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor's commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of 0.15e-, - , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.

引用

页码：6843 / 6849

页数：7