Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs

被引：0

作者：

Belov A.G. ^{[1
]}

Kanevskii V.E. ^{[1
]}

Kladova E.I. ^{[1
]}

Knyazev S.N. ^{[1
]}

Komarovskiy N.Yu. ^{[1
,2
]}

Parfent’eva I.B. ^{[1
]}

Chernyshova E.V. ^{[1
,2
]}

机构：

[1] Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), 2-1 Elektrodnaya Str, Moscow

[2] National University of Science and Technology “MISIS”, 4-1 Leninsky Ave, Moscow

来源：

Modern Electronic Materials | 2023年 / 9卷 / 02期

关键词：

electron concentration; gallium arsenide; Hall effect; plasmon-phonon interaction; reflection spectrum;

D O I：

10.3897/j.moem.9.2.109743

中图分类号：

学科分类号：

摘要：

The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coef-ficient measurements have been carried out for the same specimens (all the measurements were carried out at room temperature). The reflection spectra have been processed using the Kramers–Kronig relations, spectral dependences of the real and imaginary parts of the complex dielectric permeability have been calculated and loss function curves have been plotted. The loss function maximum position has been used to calculate the characteristic wavenumber corresponding to the high-frequency plasmon-phonon mode frequency. Theoretical calculations have been conducted and a calibration curve has been built up for determining heavy hole concentration in p-GaAs at T = 295 K based on known characteristic wavenumber. Further matching of the optical and Hall data has been used for determining the light to heavy hole mobility ratio. This ratio proves to be in the 1.9–2.8 range which is far lower as compared with theoretical predictions in the assumption of the same scattering mechanism for light and heavy holes (at optical phonons). It has been hypothesized that the scattering mechanisms for light and heavy holes differ. © 2023 National University of Science and Technology MISIS.

引用

页码：69 / 76

页数：7