Dielectric Modulated Nanotube Tunnel Field-Effect Transistor with Core-Shell Cavity as a Label-Free Biosensor: Proposal and Analysis

被引:0
|
作者
Patel, Sharang Dhar [1 ]
Swaroop, Bhogi Satya [1 ]
Sahay, Shubham [1 ]
机构
[1] Indian Inst Kanpur, Elect Engn Dept, NeuroCHaSE lab, Kanpur 208016, Uttar Pradesh, India
来源
ACS APPLIED BIO MATERIALS | 2024年 / 7卷 / 11期
关键词
germanium source; nanotube; tunnel FET; dielectric modulated; sensitivity; biosensor; steric Hindrance; INDUCED DRAIN LEAKAGE; PERFORMANCE ASSESSMENT; ELECTRICAL DETECTION; FET; SENSITIVITY; DESIGN; NANOGAP; IMPACT;
D O I
10.1021/acsabm.4c00989
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dielectric Modulated Field-Effect Transistors (DMFETs) have emerged as promising candidates for label-free bioanalyte detection. However, the inherent short-channel effects in conventional DMFETs increase their static power dissipation significantly and limit their scalability and sensitivity. Therefore, FETs based on alternate conduction mechanism such as tunneling (TFETs), which are immune to the short-channel effects, appear to be a lucrative alternative to the MOSFETs for biosensing application. In this work, we propose a novel Dual Cavity Dielectric Modulated Nanotube Tunnel FET (DCDM NTTFET)-based label-free biosensor consisting of a Ge source and nanocavities within the core as well as a shell gate stack, which not only outperforms the conventional MOSFET and advanced nanowire (NW) TFET-based biosensors in terms of energy-efficiency and scalability but also exhibits a significantly high drain current sensitivity (S I ON = 2.9 x 108) and a threshold voltage sensitivity (S V th = 0.85), and a considerably high selectivity of more than 6 orders of magnitude. We also perform a comprehensive design space exploration for the proposed DCDM NTTFET and provide necessary design guidelines to further improve its performance considering the practical artifacts such as steric hindrance.
引用
收藏
页码:7356 / 7364
页数:9
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