Study of Optical Radiation from Low-energy Xe Ion Irradiation on Al Surface

被引：0

作者：

Yang Z. ^{[1
]}

Xu Q. ^{[2
]}

Geng Y. ^{[3
]}

Guo Y. ^{[4
]}

Dai Z. ^{[3
]}

Zhao H. ^{[2
]}

Yang Z. ^{[1
]}

机构：

[1] Gansu Provincical Hospital, Lanzhou

[2] Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou

[3] College of Physics, Jilin University, Changchun

[4] College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing

来源：

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | 2021年 / 55卷 / 08期

关键词：

Optical emission; Photon yield; Sputtered atom; Xe ion;

D O I：

10.7538/yzk.2020.youxian.0658

中图分类号：

学科分类号：

摘要：

Optical emission from sputtered Al atoms in the interaction of 200-550 keV Xe10+ ions with Al surface was measured, and spectral line intensity ratio of Al Ⅰ 308.10, 309.14, 394.52 and 396.28 nm and photon yield were investigated as a function of the incident ion energy. There is little change for spectral line intensity ratio with the increasing collision ion energy, and the photon yield of the spectral line do not appear the same tendency with the increasing collision energy within the energy of the present experiment. At 450 keV, the photon yield presents a maximum, and the photon yield is reduced with the energy increase when the incident ion energy is more than 450 keV. Combined with the nuclear stopping and electronic stopping effect, it is shown that the nuclear stopping effect plays a leading role in the collision when the incident ion energy is less than 450 keV, and the electron stopping plays a leading role in the collision when the incident ion energy is more than 450 keV. © 2021, Editorial Board of Atomic Energy Science and Technology. All right reserved.

引用

页码：1353 / 1358

页数：5

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