Quasiperiodic Moire Reconstruction and Modulation of Electronic Properties in Twisted Bilayer Graphene Aligned with Hexagonal Boron Nitride

被引:0
|
作者
Li, Si-yu [1 ,2 ]
Xu, Zhiyue [3 ]
Wang, Yingbo [2 ]
Han, Yingzhuo [2 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [6 ]
Song, Aisheng [3 ]
Ma, Tian-Bao [3 ]
Gao, Hong-Jun [1 ,2 ]
Jiang, Yuhang [4 ]
Mao, Jinhai [2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Tsinghua Univ, State Key Lab Tribol Adv Equipment, Beijing 100084, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[5] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[6] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
基金
中国国家自然科学基金; 中国博士后科学基金; 国家重点研发计划;
关键词
MAGIC-ANGLE; UNCONVENTIONAL SUPERCONDUCTIVITY; INSULATORS; STATES;
D O I
10.1103/PhysRevLett.133.196401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Twisted van der Waals systems have emerged as intriguing arenas for exploring exotic strongly correlated and topological physics, with structural reconstruction and strain playing essential roles in determining their electronic properties. In twisted bilayer graphene aligned with hexagonal boron nitride (TBG/h-BN), the interplay between the two sets of moire<acute accent> patterns from graphene-graphene (G-G) and graphene-h-BN (G - h-BN) interfaces can trigger notable moire<acute accent> pattern reconstruction (MPR). Here, we present the quasiperiodic MPR in the TBG/h-BN with two similar moire<acute accent> wavelengths, wherein the MPR results from the incommensurate mismatch between the wavelengths of the G-G and G - h-BN moire<acute accent> patterns. The short-range, nearly ordered moire<acute accent> super-superstructures deviate from moire<acute accent> quasicrystal and are accompanied by inhomogeneous strain, thereby inducing spatially variable energy separations between the Van Hove singularities (VHs) in the band structures of the TBG near the magic angle. By tuning the carrier densities in our sample, correlated gaps at specific AA sites are observed, uncovering the quantumdot-like behavior and incoherent characteristics of the AA sites in the TBG. Our findings would give new hints on the microscopic mechanisms underlying the abundant novel quantum phases in the TBG/h-BN.
引用
收藏
页数:6
相关论文
共 15 条
  • [1] Insulators at fractional fillings in twisted bilayer graphene partially aligned to hexagonal boron nitride
    Wong, Dillon
    Nuckolls, Kevin P.
    Oh, Myungchul
    Lee, Ryan L.
    Watanabe, Kenji
    Taniguchi, Takashi
    Yazdani, Ali
    LOW TEMPERATURE PHYSICS, 2023, 49 (06) : 655 - 661
  • [2] Defect-assisted tunneling spectroscopy of electronic band structure in twisted bilayer graphene/hexagonal boron nitride moire superlattices
    Seo, Yuta
    Masubuchi, Satoru
    Onodera, Momoko
    Moriya, Rai
    Zhang, Yijin
    Watanabe, Kenji
    Taniguchi, Takashi
    Machida, Tomoki
    APPLIED PHYSICS LETTERS, 2022, 120 (20)
  • [3] Imaging Dual-Moire Lattices in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride Using Microwave Impedance Microscopy
    Huang, Xiong
    Chen, Lingxiu
    Tang, Shujie
    Jiang, Chengxin
    Chen, Chen
    Wang, Huishan
    Shen, Zhi-Xun
    Wang, Haomin
    Cui, Yong-Tao
    NANO LETTERS, 2021, 21 (10) : 4292 - 4298
  • [4] Electronic properties of graphene/hexagonal-boron-nitride moire superlattice
    Moon, Pilkyung
    Koshino, Mikito
    PHYSICAL REVIEW B, 2014, 90 (15):
  • [5] Twisted bilayer graphene aligned with hexagonal boron nitride: Anomalous Hall effect and a lattice model
    Zhang, Ya-Hui
    Mao, Dan
    Senthil, T.
    PHYSICAL REVIEW RESEARCH, 2019, 1 (03):
  • [6] Band structure of twisted bilayer graphene on hexagonal boron nitride
    Cea, Tommaso
    Pantaleon, Pierre A.
    Guinea, Francisco
    PHYSICAL REVIEW B, 2020, 102 (15)
  • [7] Collective excitations of the Chern-insulator states in commensurate double moire superlattices of twisted bilayer graphene on hexagonal boron nitride
    Lin, Xianqing
    Zhou, Quan
    Li, Cheng
    Ni, Jun
    PHYSICAL REVIEW B, 2023, 107 (19)
  • [8] Moire flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields
    Li, Fengping
    Lee, Dongkyu
    Leconte, Nicolas
    Javvaji, Srivani
    Kim, Young Duck
    Jung, Jeil
    PHYSICAL REVIEW B, 2024, 110 (15)
  • [9] Unique Electronic Properties of the Twisted Bilayer Graphene
    Wang, Mingda
    Shan, Wenzhe
    Wang, Hongming
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (05):
  • [10] Effective lattice model of graphene moire superlattices on hexagonal boron nitride
    Lin, Xianqing
    Ni, Jun
    PHYSICAL REVIEW B, 2019, 100 (19)