Spintronic performance of bent zigzag phosphorene nanoribbons: effects of mechanical deformation and gate voltage

This study explores the spintronic properties of an innovative device incorporating in-plane bent zigzag phosphorene nanoribbons (ZPNRs). The device features ZPNRs with a channel length of 23.4 nm, bent into circular arcs with varying curvatures. We investigate the impact of mechanical deformation and gate voltage on the spin-dependent properties, including the density of states, transmission coefficients, and spin Seebeck coefficient (SSC). Our results demonstrate that the device exhibits a spin-semiconducting phase with tunable spin-splitting characteristics and spin-dependent transport properties, both of which are influenced by the curvature. An increase in the bending parameter markedly enhances spin splitting, leading to the SSC attaining values as high as 1.35 mV K-1. Moreover, the application of gate voltage further enhances both spin polarization and spin current. The significant impact of mechanical deformation and gate voltage on spintronic performance showcases the potential of bent ZPNRs for advanced applications. This study explores how bending and gate voltage tune the spintronic properties of zigzag phosphorene nanoribbons (ZPNRs) for advanced applications.