Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf0.5Zr0.5O2 Utilizing Schottky Emission Current in Switchable Diode

被引：1
作者：
Lee, Kyumin [1 ]
Oh, Sang-Ho [2 ]
Jang, Hojung [1 ]
Lee, Sunhyeong [1 ]
Lee, Byeong-Joo [2 ]
Hwang, Hyunsang [1 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 37673, South Korea
[2] POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
Ferroelectric diode; HZO; Schottky emission; nanoscale; variability; microwave annealing; interfacial layer; FUTURE; PHASE;
D O I：
10.1109/LED.2024.3451968
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we proposed a novel variability analysis method in nanoscale ferroelectric Hf-0.Zr-5(0).O-5(2) (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.
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收藏
页码：2078 / 2081
页数：4
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