Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

被引：0

作者：

Najmi, Mohammed A. ^{[1
]}

Jalmood, Rawan S. ^{[2
]}

Kotov, Ivan ^{[1
]}

Altinkaya, Cesur ^{[2
]}

Takeuchi, Wakana ^{[1
,3
]}

Iida, Daisuke ^{[1
]}

Ohkawa, Kazuhiro ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, Elect & Math Sci & Engn Div, Comp, Thuwal 239556900, Saudi Arabia

[2] King Abdullah Univ Sci & Technol KAUST, Mat Sci & Engn Program, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[3] Aichi Inst Technol, Dept Elect & Elect Engn, 1247 Yachigusa Yakusa cho, Toyota, Aichi 4700392, Japan

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 11期

关键词：

InGaN; ScAlMgO4; LEDs; MOVPE; SAPPHIRE SUBSTRATE; CRYSTALLINITY; EMISSION; GROWTH; SINGLE;

D O I：

10.35848/1882-0786/ad8f0e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report the first demonstration of a full InGaN-based red LED grown on a c-plane ScAlMgO4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm(-2)). The light output power and external quantum efficiency were 12.6 mu W and 0.016% at 40 mA (10.5 A cm(-2)), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes. 2024 The Published on behalf of The of IOP Ltd

引用

页数：5

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