Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

被引：0

作者：

Najmi, Mohammed A. ^{[1
]}

Jalmood, Rawan S. ^{[2
]}

Kotov, Ivan ^{[1
]}

Altinkaya, Cesur ^{[2
]}

Takeuchi, Wakana ^{[1
,3
]}

Iida, Daisuke ^{[1
]}

Ohkawa, Kazuhiro ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, Elect & Math Sci & Engn Div, Comp, Thuwal 239556900, Saudi Arabia

[2] King Abdullah Univ Sci & Technol KAUST, Mat Sci & Engn Program, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[3] Aichi Inst Technol, Dept Elect & Elect Engn, 1247 Yachigusa Yakusa cho, Toyota, Aichi 4700392, Japan

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 11期

关键词：

InGaN; ScAlMgO4; LEDs; MOVPE; SAPPHIRE SUBSTRATE; CRYSTALLINITY; EMISSION; GROWTH; SINGLE;

D O I：

10.35848/1882-0786/ad8f0e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report the first demonstration of a full InGaN-based red LED grown on a c-plane ScAlMgO4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm(-2)). The light output power and external quantum efficiency were 12.6 mu W and 0.016% at 40 mA (10.5 A cm(-2)), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes. 2024 The Published on behalf of The of IOP Ltd

引用

页数：5

共 50 条

[1] InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates
Ozaki, Takuya
Funato, Mitsuru
Kawakami, Yoichi
APPLIED PHYSICS EXPRESS, 2015, 8 (06)
[2] ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: Demonstration of far-red LEDs
Funato, Mitsuru
Maehara, Keita
Matsuda, Yoshinobu
Ozaki, Takuya
Kawakami, Yoichi
GALLIUM NITRIDE MATERIALS AND DEVICES XVIII, 2023, 12421
[3] Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate
Velazquez-Rizo, Martin
Najmi, Mohammed A.
Iida, Daisuke
Kirilenko, Pavel
Ohkawa, Kazuhiro
APPLIED PHYSICS EXPRESS, 2022, 15 (06)
[4] Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission
Tithy, F. Z.
Hussain, S.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2023, 26 (02) : 215 - 221
[5] Monolithic Broadband InGaN Light-Emitting Diode
Feng, Cong
Huang, Jian-an
Choi, H. W.
ACS PHOTONICS, 2016, 3 (07): : 1294 - 1300
[6] True-Red InGaN Light-Emitting Diodes for Display Applications
Armitage, Robert
Ren, Zhongmin
Holmes, Mark
Flemish, Joseph
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (11):
[7] Full InGaN red light emitting diodes
Dussaigne, A.
Barbier, F.
Damilano, B.
Chenot, S.
Grenier, A.
Papon, A. M.
Samuel, B.
Ben Bakir, B.
Vaufrey, D.
Pillet, J. C.
Gasse, A.
Ledoux, O.
Rozhavskaya, M.
Sotta, D.
JOURNAL OF APPLIED PHYSICS, 2020, 128 (13)
[8] InGaN/GaN Light-Emitting Diode on Concave-Hexagonal-Patterned Sapphire Substrate
Han, Nam
Kim, Hyung Gu
Kim, Hee Yun
Kim, Hyun Kyu
Kang, Ji Hye
Ryu, Jae Hyoung
Lee, Yong Seok
Suh, Eun-Kyung
Hong, Chang-Hee
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (11)
[9] Electrically Driven Single Pyramid InGaN/GaN Micro Light-Emitting Diode Grown on Silicon Substrate
Chen, Weijie
Hu, Guoheng
Jiang, Jianliang
Liu, Minggang
Yang, Yibin
Xiang, Peng
Hu, Gangwei
Lin, Yan
Wu, Zhisheng
Liu, Yang
Zhang, Baijun
JOURNAL OF DISPLAY TECHNOLOGY, 2015, 11 (03): : 285 - 291
[10] Design of violet InGaN light-emitting diode with staggered quantum well structure
LI Wei-jun1
Optoelectronics Letters, 2008, (06) : 399 - 402

← 1 2 3 4 5 →