The role of a tantalum interlayer in enhancing the properties of Fe3O4 thin films

被引：0

作者：

Ngo, Hai Dang ^{[1
]}

Truong, Vo Doan Thanh ^{[1
]}

Le, Van Qui ^{[2
]}

Pham, Hoai Phuong ^{[3
]}

Pham, Thi Kim Hang ^{[1
]}

机构：

[1] Faculty of Applied Sciences, Ho Chi Minh University of Technology and Education, Ho Chi Minh City

[2] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

[3] NTT Hi-Tech Institute, Nguyen Tat Thanh University, 298-300A Nguyen Tat Thanh Street, Ward 13, District 4, Ho Chi Minh City

来源：

Beilstein Journal of Nanotechnology | 2024年 / 15卷

关键词：

buffer layer; Fe[!sub]3[!/sub]O[!sub]4[!/sub; magnetite; RF magnetron sputtering; spintronic;

D O I：

10.3762/BJNANO.15.101

中图分类号：

学科分类号：

摘要：

High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe3O4 film grown on MgO/Ta/SiO2/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe3O4 thin films compared to cases of no or just a single buffering layer. © 2024 Ngo et al.; licensee Beilstein-Institut. License and terms: see end of document.

引用

页码：253 / 1259

页数：1006