The role of a tantalum interlayer in enhancing the properties of Fe3O4 thin films

被引：0
作者：
Ngo, Hai Dang [1 ]
Truong, Vo Doan Thanh [1 ]
Le, Van Qui [2 ]
Pham, Hoai Phuong [3 ]
Pham, Thi Kim Hang [1 ]
机构：
[1] Faculty of Applied Sciences, Ho Chi Minh University of Technology and Education, Ho Chi Minh City
[2] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu
[3] NTT Hi-Tech Institute, Nguyen Tat Thanh University, 298-300A Nguyen Tat Thanh Street, Ward 13, District 4, Ho Chi Minh City
来源：
Beilstein Journal of Nanotechnology | 2024年 / 15卷
关键词：
buffer layer; Fe[!sub]3[!/sub]O[!sub]4[!/sub; magnetite; RF magnetron sputtering; spintronic;
D O I：
10.3762/BJNANO.15.101
中图分类号：
学科分类号：
摘要：
High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe3O4 film grown on MgO/Ta/SiO2/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe3O4 thin films compared to cases of no or just a single buffering layer. © 2024 Ngo et al.; licensee Beilstein-Institut. License and terms: see end of document.
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页码：253 / 1259
页数：1006
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