Passively mode-locked Tm:YAP laser with a V2AlC saturable absorber

被引：0

作者：

Ma, Zhaoyu ^{[1
]}

Hao, Qianqian ^{[1
]}

Wang, Huanli ^{[1
]}

Gao, Qiong ^{[2
]}

Mi, Shuyi ^{[1
]}

Li, Daguang ^{[1
]}

Li, Linjun ^{[1
]}

Xu, Baoyu ^{[3
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, State Key Lab Funct Mat & Devices Special Environm, Res Ctr Crystal Mat,Xinjiang Key Lab Funct Crystal, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China

[2] Harbin Normal Univ, Sch Phys & Elect Engn, Key Lab Photon & Elect Bandgap Mat, Minist Educ, Harbin, Peoples R China

[3] Heilongjiang Univ Sci & Technol, Coll Sci, Harbin, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2024年 / 66卷 / 10期

关键词：

2 mu m thulium laser; MAX phase V2AlC; passively mode-locked; saturable absorber; MU-M; PULSE GENERATION; LOCKING; POWER;

D O I：

10.1002/mop.70007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a V2AlC-based saturable absorber (SA) was applied to a 2 mu m band passively mode-locked (PML) laser. The saturation intensity and modulation depth of the V2AlC-based SA were detected by the I-scan method, which were 225.05 MW/cm(2) and 7.68%, respectively. In the PML mode, an average power of 2.12 W at 1939 nm and a pulse width of 1077 ps at 82.49 MHz were obtained from the Tm:YAP laser. In addition, the laser exhibited a good beam quality factor (M-2) which was measured to be less than 1.2. These results will pave the way for the application of V2AlC-based SA in ultrafast lasers.

引用

页数：8

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