Comparative study of exciton-phonon interactions in GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy

被引：0
|
作者：
Yeo, Inah [1 ]
Ahn, Sun Hong [1 ]
Bae, Seo Kyung [1 ]
Kim, Junhoi [1 ]
Kim, Jong Su [2 ]
Song, Jin Dong [3 ]
机构：
[1] Korea Sci Acad KAIST, Pusan 47162, South Korea
[2] Yeungnam Univ, Dept Phys, Gyeongsan City 38541, South Korea
[3] Korea Inst Sci & Technol, Postsilicon Semicond Inst, Seoul 02792, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2024年 / 35卷 / 28期
关键词：
TEMPERATURE-DEPENDENCE;
D O I：
10.1007/s10854-024-13653-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated exciton-phonon interactions in three types of GaAs/Al0.3Ga0.7As quantum dots (QDs grown by droplet epitaxy. Comparative optical studies were conducted on QDs of similar species, grown under identical conditions, and on various other QD types. Multioscillator models were employed to analyze the phonon coupling channels in various QD species, with a focus on the influence of capping time on high-energy phonon channels. The findings were found to be consistent with those of previous atomic-scale structural analyses. Engineering exciton-phonon interactions offers a viable approach for implementing QD-based devices in optoelectronics, thermoelectrics, and information-processing applications.
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页数：8
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